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PD-95889
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level RDS(on) IRHMS57160 100K Rads (Si) 0.013 IRHMS53160 300K Rads (Si) 0.013 IRHMS54160 600K Rads (Si) 0.013 IRHMS58160 1000K Rads (Si) 0.013 ID 45A* 45A* 45A* 45A*
IRHMS57160 JANSR2N7471T1 100V, N-CHANNEL
REF: MIL-PRF-19500/698
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TECHNOLOGY
QPL Part Number JANSR2N7471T1 JANSF2N7471T1 JANSG2N7471T1 JANSH2N7471T1
Low-Ohmic TO-254AA
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 45* 180 208 1.67 20 493 45 20.8 6.7 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical)
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11/01/04
IRHMS57160, JANSR2N7471T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 42 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.013 4.0 -- 10 25 100 -100 160 55 65 35 125 75 50 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 45A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 45A A VDS = 80V ,VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 50V VDD = 50V, ID = 45A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
6270 1620 35 1.0
-- -- -- --
pF
VGS = 0V, VDS = 25V f = 100KHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 45* 180 1.2 270 2.7
Test Conditions
A
V ns C Tj = 25C, IS = 45A, VGS = 0V A Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.60 0.21 -- -- 48 C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMS57160, JANSR2N7471T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source On-State A Resistance (Low-Ohmic TO-254) Diode Forward Voltage A Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 100 2.0 -- -- -- -- -- -- -- 4.0 100 -100 25 0.013 0.013 1.2 100 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.014 0.014 1.2 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 80V, VGS = 0V VGS =12V, ID = 45A VGS = 12V, ID = 45A VGS = 0V, IS = 45A
1. Part numbers IRHMS57160 ( JANSR2N7471T1 ), IRHMS53160 ( JANSF2N7471T1 ) and IRHMS54160 ( JANSG2N7471T1 ) 2. Part number IRHMS58160 ( JANSH2N7471T1 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25 --
120 100 80 60 40 20 0 0 -5 -10 VGS -15 -20
VDS
Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS57160, JANSR2N7471T1
Pre-Irradiation
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS 15V 12V 10V 9.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
5.0V
5.0V 10
10
1 0.1 1
60s PULSE WIDTH Tj = 25C 10 100
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 45A
2.0
ID, Drain-to-Source Current (A)
TJ = 150C
1.5
100 TJ = 25C
1.0
0.5
10 5 5.5
VDS = 50V 15 60s PULSE WIDTH 6 6.5 7
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHMS57160, JANSR2N7471T1
12000
10000
VGS, Gate-to-Source Voltage (V)
100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
C oss = C ds + C gd
20 ID = 45A 16 VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
8000
Ciss
6000
12
Coss
4000
8
2000
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 200
Crss
1 10 100
0
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100 T J = 150C
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100s
10 Tc = 25C Tj = 150C Single Pulse 1 10 100
10
1ms
VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V)
10ms
1000
1
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHMS57160, JANSR2N7471T1
Pre-Irradiation
100
LIMITED BY PACKAGE
80
VDS VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
ID , Drain Current (A)
-V DD
60
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
P DM t1
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
t2
0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHMS57160, JANSR2N7471T1
1000
EAS , Single Pulse Avalanche Energy (mJ)
15V
800
ID 20A 28.5A BOTTOM 45A TOP
VDS
L
DRIVER
600
RG
D.U.T.
IAS tp
+ - VDD
A
400
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
IRHMS57160, JANSR2N7471T1
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.49 mH Peak IL = 45A, VGS = 12V A ISD 45A, di/dt 630A/s, VDD 100V, TJ 150C 12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 80 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-254AA
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665]
1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
C
14.48 [.570] 12.95 [.510]
0.84 [.033] MAX.
3X
3.81 [.150]
2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
NOT ES:
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 11/2004
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